DC Microgrid Protection System Based on Positive Channel Metal Oxide Semiconductor

A local measurement-based protection scheme for DER integrated DC microgrid using Bagging Tree

In recent years, DC microgrid has attracted considerable attention of the research community because of the wide usage of DC power-based appliances. However, the acceptance of DC microgrid by power utilities is still limited due to the issues associated with the development of a reliable protection scheme. The high magnitude of DC fault current, its rapid rate of rising and absence of zero cros...

Plasmonic green nanolaser based on a metal-oxide-semiconductor structure.

Realization of smaller and faster coherent light sources is critically important for the emerging applications in nanophotonics and information technology. Semiconductor lasers are arguably the most suitable candidate for such purposes. However, the minimum size of conventional semiconductor lasers utilizing dielectric optical cavities for sustaining laser oscillation is ultimately governed by ...

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Surface Dose Measurements on an Indigenously Made Inhomogeneous Female Pelvic Phantom Using Metal-Oxide-Semiconductor-Field-Effect-Transistor Based Dosimetric System

Introduction: Megavoltage X-ray beams are used to treat cervix cancer due to their skin-sparing effect. Preferably, the radiation surface doses should be negligible; however, it increases due to electron contamination produced by various field parameters. Therefore, it is essential to provide proper knowledge about the effect of different field parameters on radiation doses. This study sought t...

Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors.

Conformal bioelectronics enable wearable, noninvasive, and health-monitoring platforms. We demonstrate a simple and straightforward method for producing thin, sensitive In2O3-based conformal biosensors based on field-effect transistors using facile solution-based processing. One-step coating via aqueous In2O3 solution resulted in ultrathin (3.5 nm), high-density, uniform films over large areas....